NP88N055KUG_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP88N055KUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
6
4
2
0
-100
VGS = 10 V
ID = 44 A
-50 0 50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
td( of f )
td( on)
10 ^tr
VDD = 28 V
V GS = 10 V
RG = 0 Ω
1
0.1
1
tf
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10
0V
1
0.1
0.01
0
Pulsed
0.4
0.8
1.2
1.6
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
Ciss
10000
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.1
1
Crss
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
12
VDD = 44 V
50
28 V
10
11 V
40
8
30
6
VGS
20
4
10
0
0
VDS
40
80
2
ID = 88 A
0
120 160 200
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
0.1
di/dt = 100 A/µs
VGS = 0 V
1
10
100
IF - Diode Forward Current - A
Data Sheet D16856EJ1V0DS
5