NP88N055KUG_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP88N055KUG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
300
200
VGS = 10 V
100
Pulsed
0
0
0.4
0.8
1.2
1.6
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
VDS = VGS
ID = 250 µA
0
-100 -50 0
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
6
5
4
VGS = 10 V
3
2
1
Pulsed
0
1
10
100
1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
TA = −55°C
−25°C
25°C
85°C
125°C
150°C
175°C
0.01
0.001
0
VDS = 10 V
Pulsed
1
2
3
4
5
6
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = −55°C
25°C
85°C
125°C
175°C
10
1
0.1
VDS = 10 V
Pulsed
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
ID = 17.6 A
Pulsed
8
44 A
88 A
6
4
2
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
4
Data Sheet D16856EJ1V0DS