NP82N06PDG_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
14
ID = 41 A
12 Pulsed
10
8
VGS = 5 V
6
4
VGS = 10 V
2
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
100
td(off)
td(on)
10
VDD = 30 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
tf
10
ID - Drain Current - A
tr
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10
1
VGS = 10 V
VGS = 5 V
VGS = 0 V
0.1
Pulsed
0.01
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP82N06PDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C iss
1000
C oss
VGS = 0 V
f = 1 MHz
100
0.1
1
C rss
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
12
50
VDD = 48 V
10
VDD = 30 V
40
VDD = 12 V
8
30
20
10
0
0
6
VGS
4
VDS
2
ID = 82 A
0
20 40 60 80 100 120
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/μs
VGS = 0 V
10
1
10
100
IF - Diode Forward Current - A
Data Sheet D18227EJ1V0DS
5