NP82N06PDG_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP82N06PDG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
VGS = 10 V
VGS = 5 V
200
100
Pulsed
0
0
2
4
6
8
10
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
2.5
2.0
1.5
1.0
0.5
VDS = VGS
ID = 250 μA
0.0
-100
0
100
200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
9
8
7
VGS = 5 V
6
5
4
VGS = 10 V
3
2
1 Pulsed
0
1
10
100
1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
VDS = 10 V
Pulsed
10
TA = 175°C
1
150°C
0.1
125°C
85°C
0.01
25°C
−25°C
−55°C
0.001
0
1
2
3
4
5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
TA = −55°C
−25°C
25°C
10
85°C
125°C
150°C
175°C
1
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
12
11
10
9
8
ID = 82 A
7
ID = 41 A
6
5
4
ID = 16.4 A
3
2
1 ^Pulsed
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
4
Data Sheet D18227EJ1V0DS