NP82N06MLG Datasheet, PDF (7/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP82N06MLG, NP82N06NLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
16
12
VGS = 5 V
8
4
0
-75
10 V
ID = 41 A
Pulsed
-25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
10
VDD = 30 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
tr
tf
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10 V
5V
10
VGS = 0 V
1
0.1
0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.1
1
Crss
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
50
40
30
20
10
0
0
12
VDD = 48 V
30 V
10
12 V
8
6
VGS
4
VDS
2
ID = 82 A
0
20 40 60 80 100 120
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/μs
VGS = 0 V
10
1
10
100
IF - Diode Forward Current - A
Data Sheet D19802EJ1V0DS
5