NP82N06MLG Datasheet, PDF (3/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N06MLG, NP82N06NLG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N06MLG and NP82N06NLG are N-channel MOS Field Effect Transistors designed for high current
switching applications.
ORDERING INFORMATION
PART NUMBER
NP82N06MLG-S18-AY ^Note
NP82N06NLG-S18-AY ^Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube
50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
FEATURES
• Logic level
• Built-in gate protection diode
• Super low on-state resistance
RDS(on)1 = 7.4 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 9.7 mΩ MAX. (VGS = 5 V, ID = 41 A)
• High current rating
ID(DC) = ±82 A
• Low input capacitance
Ciss = 5700 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
(TO-220)
(TO-262)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
±82
A
±270
A
Total Power Dissipation (TC = 25°C)
PT1
143
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Storage Temperature
Repetitive Avalanche Current ^Note2
Repetitive Avalanche Energy ^Note2
Tstg
−55 to +175 °C
IAR
37
A
EAR
137
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19802EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009