NP70N10KUF_15 Datasheet, PDF (7/11 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
ID = 35 A
50 Pulsed
40
30
VGS = 10 V
20
10
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
td(off)
td(on)
tr
VDD = 50 V
VGS = 10 V
RG = 0 Ω
tf
1
0.1
1
10
100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
VGS = 10 V
0V
1
0.1
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP70N10KUF
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
100
Crss
VGS = 0 V
f = 1 MHz
10
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
90
12
80
VDD = 80 V
ID = 70 A
50 V
10
70
20 V
60
8
50
VGS
6
40
30
4
20
VDS
2
10
0
0
0
10
20
30
40
50
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1
10
100
IF – Diode Forward Current - A
Data Sheet D18040EJ2V0DS
5