NP180N04TUG_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
VGS = 10 V
ID = 90 A
4
3
2
1
0
-75
Pulsed
-25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
tr
tf
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
10
100
ID - Drain Current - A
1000
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
0V
10
Pulsed
1
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP180N04TUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
12
35
VDD = 32 V
20 V
30
8 V (160 A)
9
25
20
VGS
6
15
10
5
0
0
3
VDS
ID = 180 A
0
40 80 120 160 200 240 280
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1
1
10
100
IF - Diode Forward Current - A
1000
Data Sheet D18896EJ1V0DS
5