NP180N04TUG_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP180N04TUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10000
1000
100
R^DS(on)
(V ^GS
Limit
= ^{1i 0}
ed
V)
ID(pulse)
ID(DC)
DC
PW
= _{1i00 μs}
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
10
TC = 25°C
Single Pulse
1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/Wi
10
1
0.1
0.01
100 μ
1m
Rth(ch-C) = 0.52°C/Wi
10 m 100 m
1
10
PW - Pulse Width - s
Single Pulse
100
1000
Data Sheet D18896EJ1V0DS
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