NP160N04TDG_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP160N04TDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
ID = 80 A
5 Pulsed
4
VGS = 4.5 V
3
2
10 V
1
0
-75
-25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
td(off)
tr
td(on)
10
tf
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
10
100
ID - Drain Current - A
1000
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
0V
10
1
Pulsed
0.1
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
<R> CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
12
35
VDD = 32 V
20 V
30
8V
9
25
20
6
15
VGS
10
5
0
0
VDS
50
100
3
ID = 160 A
Pulsed
0
150
200
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1
1
10
100
1000
IF - Diode Forward Current - A
Data Sheet D18761EJ2V0DS
5