NP160N04TDG_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP160N04TDG
700
600
500
400
300
200
100
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
4.5 V
Pulsed
0.5
1
1.5
2
2.5
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
2.5
2
1.5
1
0.5
0
-75
VDS = VGS
ID = 250 μA
-25 25 75 125 175 225
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
6
Pulsed
5
4
3
VGS = 4.5 V
2
10 V
1
0
1
10
100
1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
VDS = 10 V
Pulsed
10
TA = −55°C
1
25°C
75°C
150°C
0.1
175°C
0.01
1
2
3
4
5
6
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
Tch = −55°C
25°C
100
75°C
10
1
0.1
150°C
175°C
VDS = 5 V
Pulsed
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
12
ID = 80 A
10
Pulsed
8
6
4
2
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
4
Data Sheet D18761EJ2V0DS