NP110N055PUG_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP110N055PUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
4
3
2
1
0
-100
VGS =10 V
ID = 55 A
Pulsed
-50 0 50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
1
0.1
tr
td(off)
td(on)
tf
VDD = 28 V
VGS = 10 V
RG = 0 Ω
1
10
100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
0V
10
1
Pulsed
0.1
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
Crss
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
12
50
VDD = 44 V
10
28 V
40
11 V
8
30
VGS
6
20
4
10
0
0
VDS
2
ID = 110 A
0
50 100 150 200 250 300
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
0.1
di/dt = 100 A/µs
VGS = 0 V
1
10
100
IF - Diode Forward Current - A
1000
Data Sheet D16853EJ1V0DS
5