NP110N055PUG_15 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP110N055PUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP110N055PUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP110N055PUG
TO-263 (MP-25ZP)
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A)
• Low Ciss: Ciss = 17100 pF TYP.
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±110
A
ID(pulse)
±440
A
Total Power Dissipation (TA = 25°C)
PT1
1.8
W
Total Power Dissipation (TC = 25°C)
PT2
288
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
−55 to +175
°C
Repetitive Avalanche Current ^Note2
IAR
66
A
Repetitive Avalanche Energy ^Note2
EAR
435
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16853EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004