NP110N04PUJ Datasheet, PDF (7/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP110N04PUJ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
VGS = 10 V
ID = 55 A
4 _Pulsed
3
2
1
0
-100 -50 0
50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
td(off)
td(on)
tr
tf
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
10
100
1000
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
35
30
25
20
15
10
5
0
0
16
14
VDD = 32 V
12
20 V
8V
10
8
6
VGS
4
VDS
2
ID = 110 A
0
20 40 60 80 100 120 140 160
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
0V
VGS = 10 V
10
1
0.1
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1
1
10
100
IF - Diode Forward Current - A
1000
Data Sheet D19730EJ1V0DS
5