NP110N04PUJ Datasheet, PDF (6/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP110N04PUJ
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
400
300
200
100
0
0
VGS = 10 V
Pulsed
0.2
0.4
0.6
0.8
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
0
-100
VDS = VGS
ID = 250 μA
-50 0 50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
5
VGS = 10 V
Pulsed
4
3
2
1
0
1
10
100
1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
10 ^{TA = −55°C}
25°C
1
85°C
150°C
175°C
0.1
0.01
0.001
1
VDS = 10 V
Pulsed
2
3
4
5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
TA = −55°C
25°C
100
85°C
10
1
1
150°C
175°C
VDS = 5 V
Pulsed
10
100
ID - Drain Current - A
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
5
ID = 55 A
Pulsed
4
3
2
1
0
0
5
10
15
20
25
VGS - Gate to Source Voltage - V
4
Data Sheet D19730EJ1V0DS