NP109N055PUJ_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP109N055PUJ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
5
4
3
2
1
0
-100
VGS = 10 V
ID = 55 A
Pulsed
-50 0 50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
td(off)
10
VDD = 28 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
td(on)
tr
tf
10
100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
Coss
1000
VGS = 0 V
f = 1 MHz
100
0.1
1
Crss
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
12
50
VDD = 44 V
10
28 V
40
11 V
8
30
20
10
0
0
6
VGS
4
VDS
2
ID = 110 A
0
20 40 60 80 100 120 140
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
0V
VGS = 10 V
10
1
0.1
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1
1
10
100
IF - Diode Forward Current - A
1000
Data Sheet D19729EJ1V0DS
5