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HAT3010R_05 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Silicon N / P Channel Power MOS FET High Speed Power Switching | |||
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HAT3010R
Forward Transfer Admittance vs.
Drain Current
50
20
10
Tc = â25°C
5
25°C
75°C
2
1
VDS = â10 V
Pulse Test
0.5
â0.1 â0.3 â1 â3 â10 â30 â100
Drain Current ID (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
Ciss
500
200
100
Coss
50
Crss
20 VGS = 0
f = 1 MHz
10
0 â10 â20 â30 â40 â50
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
300
100
td(off)
tr
30
td(on)
10
tf
3 VGS = â10 V, VDD = â30 V
PW = 5 µs, duty ⤠1 %
1
â0.1 â0.3 â1 â3 â10 â30
â100
Drain Current ID (A)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
â0.1 â0.3 â1 â3 â10 â30 â100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = â10 V
â25 V
â20
â50 V
â4
â40
VGS
â8
VDS
â60
VDD = â10 V
â12
â25 V
â80
â50 V
â16
ID = â5 A
â100
0
8
16 24 32
Gate Charge Qg (nc)
â20
40
Reverse Drain Current vs.
Source to Drain Voltage
â10
Pulse Test
â8
â10 V
â6
â5 V
â4
VGS = 0, 5 V
â2
0
0 â0.4 â0.8 â1.2 â1.6 â2.0
Source to Drain Voltage VSD (V)
Rev.10.00 Sep 07, 2005 page 7 of 9
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