HAT3010R_05 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N / P Channel Power MOS FET High Speed Power Switching

HAT3010R
P Channel
Maximum Safe Operation Area
–100
–10
–1
–0.1
DC
Operation in
this area is
OperPatWion=(P1W0 _m≤^11s1m000s_N¹_so^µ0_)te^sµ₇^s
limited by R_{DS (on)}
–0.01
Ta = 25°C
1 shot Pulse
–0.001
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V_DS (V)
Note 7:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
–10
V_DS = –10 V
Pulse Test
–8
–6
–4
–2
Tc = 75°C
25°C
–25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1 ^{VGS = –4.5 V}
0.05
–10 V
0.02
0.01
–1
–3
–10 –30
Drain Current I_D (A)
–100
Rev.10.00 Sep 07, 2005 page 6 of 9
Typical Output Characteristics
–10
–10 V
–8
–6 V
–4.5 V
Pulse Test
–3.5 V
–6
–4
–3 V
–2
V_GS = –2.5 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
–0.6
–0.4
I_D = –5 A
–0.2
0
0
–2 A
–1 A
–5
–10
–15
–20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.20
0.15
0.10
I_D = –1 A, –2 A
V_GS = –4.5 V
–5 V
–5 V
0.05
–1 A, –2 A
–10 V
0
–40 0
40 80 120 160
Case Temperature Tc (°C)