HAT1126R_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1126R, HAT1126RJ
Reverse Drain Current vs.
Source to Drain Voltage
–10
–10 V
Pulse Test
–8
–6
–5 V
–4
V_GS = 0, 5 V
–2
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
10 ^{Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)}
D=1
1
0.5
0.1 ^0.2
0.1
0.05
0.02
0.01
0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θch – f(t) = γs (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
10 ^{Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)}
D=1
1
0.5
0.1 ^0.2
0.1
0.05
0.02
0.01
0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θch – f(t) = γs (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
100 1000 10000
Pulse Width PW (S)
Rev.1.00 Sep. 10, 2004, page 5 of 7