HAT1126R_15 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1126R, HAT1126RJ
Electrical Characteristics
Item
Symbol
Drain to source breakdown
voltage
V_(BR)DSS
Gate to Source breakdown voltage V_(BR)GSS
Zero gate voltage drain current
I_DSS
Zero gate voltage HAT1126R
I_DSS
drain current
HAT1126RJ I_DSS
Gate to source leak current
I_GSS
Gate to source cutoff voltage
V_GS(off)
Forward transfer admittance
|y_fs|
Static drain to source on state
resistance
R_DS(on)
R_DS(on)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain charge
Qgd
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body-drain diode forward voltage
V_DF
Body-drain diode reverse recovery
time
trr
Notes: 5. Pulse test
Min
–60
±20
—
—
—
—
–1.0
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
7.0
40
60
2300
230
140
37
6.5
8
20
15
55
10
–0.85
30
Max
—
—
–1
—
–10
±10
–2.5
—
50
85
—
—
—
—
—
—
—
—
—
—
–1.1
—
(Ta = 25°C)
Unit
Unit
V I_D = –10 mA, V_GS = 0
V I_G = ±100 µA, V_DS = 0
µA V_DS = –60 V, V_GS = 0
µA V_DS = –48 V, V_GS = 0
µA ^{Ta = 125°C}
µA V_GS = ±16 V, V_DS = 0
V V_DS = –10 V, I_D = –1 mA
S
I_D = –3.0 A^Note5, V_DS = –10 V
mΩ I_D = –3.0 A^Note5, V_GS = –10 V
mΩ I_D = –3.0 A^Note5, V_GS = –4.5 V
pF V_DS = –10 V, V_GS = 0
pF ^{f = 1 MHz}
pF
nC V_DD = –25 V
nC ^VGS ^{= –10 V}
nC ^{ID = –6.0 A}
ns V_GS = –10 V, I_D= –3.0 A
ns ^VDD ^{≅ –30 V}
ns ^{RL = 10 Ω}
ns ^{RG = 4.7 Ω}
V
I_F = –6.0 A, V_GS = 0^Note5
ns
I_F = –6.0 A, V_GS = 0
diF/dt = 100 A / µs
Rev.1.00 Sep. 10, 2004, page 2 of 7