2SJ626 Datasheet, PDF (7/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

2SJ626
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
800
600
TA = 125°C
75°C
400
25°C
-25°C
200
0
-0.01
Pulsed
VGS = −10 V
-0.1
-1
-10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
800
TTAAA===111222555°°C°CC
600
75°C
25°C
400
-25°C
200
0
-0.01
1000
Pulsed
VGS = −4.0 V
-0.1
-1
-10
ID - Drain Current – A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
C iss
f = 1.0 MHz
100
C oss
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
800
TA = 125°C
600
75°C
400
25°C
−25°C
200
0
-0.01
Pulsed
VGS = −4.5 V
-0.1
-1
-10
ID - Drain Current - A
SWITCHING CHARACTERISTICS
1000
100
10
1
-0.1
t d(off)
tf
tr
t d(on)
VDD = −30 V
VGS = −10 V
RG = 10 Ω
-1
-10
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
1
10
C rss
0.1
1
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
0.01
0.4
0.6
0.8
Pulsed
VGS = 0 V
1
1.2
VF(S-D) - Source to Drain Voltage - V
Data Sheet D15962EJ1V0DS
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