2SJ626 Datasheet, PDF (5/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

2SJ626
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0
25
50
75
100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-10
RDS(on) Limited
(VGS = −10 V)
ID(pulse)
PW = 1 ms
ID(DC)
10 ms
100 ms
-1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.5
1.25
Mounted on FR-4 board
t ≤ 5 sec.
1
0.75
0.5
0.25
0
0
25
50
75 100 125 150 175
TA - Ambient Temperature - °C
5s
-0.1
Single Pulse
Mounted on FR-4 board of
50 cm² x 1.1 mm
-0.01
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Single Pulse
Without board
100
Mounted on FR-4 board of
50 cm² x 1.1 mm
10
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D15962EJ1V0DS
3