2SC5623 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Silicon NPN Epitaxial High Frequency Low Noise Amplifier

2SC5623
S11 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
−10
−.2
−5
−4
−3
−.4
−2
−.6
−.8 _−1
−1.5
Condition : V_CE = 2 V , I _C = 10 mA
100 to 3000 MHz (100 MHz step)
S21 Paramter vs. Frequency
90
Scale: 6 / div.
120
60
150
30
180
0
−150
−30
−120
−60
−90
Condition : V_CE = 2 V , I _C = 10 mA
100 to 3000 MHz (100 MHz step)
S12 Parameter vs. Frequency
90
Scale: 0.02 / div.
120
60
150
30
180
0
−150
−30
−120
−60
−90
Condition : V_CE = 2 V , I _C = 10 mA
100 to 3000 MHz (100 MHz step)
S22 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
−10
−.2
−5
−4
−.4
−.6
−.8 _−1
−3
−2
−1.5
Condition : _{VCE = 2 V , I C = 10 mA}
100 to 3000 MHz (100 MHz step)