2SC5623 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon NPN Epitaxial High Frequency Low Noise Amplifier

2SC5623
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pc
Tj
Tstg
Ratings
Unit
10
V
3.5
V
1
V
12
mA
50
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V_(BR)CBO
10
voltage
Collector cutoff current
I _CBO
—
Collector cutoff current
I _CEO
—
Emitter cutoff current
I _EBO
—
DC current transfer ratio
h_FE
60
Collector output capacitance Cob
—
Gain bandwidth product
f_T
23
Power gain
PG
14
Noise figure
NF
—
Typ
—
—
—
—
100
0.15
26
18
1.8
Max
—
1
1
10
140
0.4
—
—
2.3
Unit
V
µA
µA
µA
V
pF
GHz
dB
dB
Test Conditions
I_C = 10 µA , I_E = 0
V_CB = 8 V , I_E = 0
V_CE = 3 V , R_BE = ∞
V_EB = 1 V , I_C = 0
V_CE = 2 V , I_C = 10 mA
V_CB = 2 V , I_E = 0
f = 1 MHz
V_CE = 2 V , I_C = 10 mA
f = 2 GHz
V_CE = 2 V , I_C = 10 mA
f = 1.8 GHz
V_CE = 2 V , I_C = 3 mA
f = 1.8 GHz