H8S-2357 Datasheet, PDF (621/1047 Pages) Renesas Technology Corp – 16-Bit Single-Chip Microcomputer H8S Family H8S-2100 Series

Write the FWE assessment program and
transfer program (and the program/erase
control program if necessary) beforehand
MD2, MD1, MD0 = 110, 111
Reset-start
Transfer program/erase control
program to RAM
Branch to program/erase control
program in RAM area
FWE = high*
Execute program/erase control
program (flash memory rewriting)
Clear FWE*
Branch to flash memory application
program
Notes: Do not apply a constant high level to the FWE pin. Apply a high level to the FWE pin
only when the flash memory is programmed or erased. Also, while a high level is
applied to the FWE pin, the watchdog timer should be activated to prevent
overprogramming or overerasing due to program runaway, etc.
* For further information on FWE application and disconnection, see section 19.14,
Flash Memory Programming and Erasing Precautions.
Figure 19-18 User Program Mode Execution Procedure
Rev.6.00 Oct.28.2004 page 593 of 1016
REJ09B0138-0600H