RJH60M6DPQ-E0_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – 600V - 40A - IGBT Application: Inverter

RJH60M6DPQ-E0
10000
Typical Capacitance vs.
Collector to Emitter Voltage
V_GE = 0 V, f = 1 MHz
Tc = 25°C
Cies
1000
100
Coes
Cres
10
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
200
160
Tc = 150°C
120
80
25°C
40
V_CC = 300 V
I_F = 40 A
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/µs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
16
V_CC = 300 V
I_F = 40 A
12
8
Tc = 150°C
4
25°C
0
0
40 80 120 160 200
Diode Current Slope di_F/dt (A/µs)
Preliminary
Dynamic Input Characteristics (Typical)
800
16
V_GE
600
12
400
8
200
0
0
V_CC = 300 V ⁴
V_CE
I_C = 40 A
Tc = 25°C
0
40 80 120 160 200
Gate Charge Qg (nC)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
1.0
V_CC = 300 V
I_F = 40 A
0.8
0.6
Tc = 150°C
0.4
0.2
25°C
0
0
40 80 120 160 200
Diode Current Slope di_F/dt (A/µs)
Forward Current vs. Forward Voltage (Typical)
200
V_CE = 0 V
Pulse Test
160
120
Tc = 25°C
150°C
80
40
0
0 0.5 1.0 1.5 2.0 2.5 3.0
C-E Diode Forward Voltage V_CEF (V)
R07DS1088EJ0100 Rev.1.00
Jun 27, 2013
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