RJH60M6DPQ-E0_15 Datasheet, PDF (2/10 Pages) Renesas Technology Corp – 600V - 40A - IGBT Application: Inverter

RJH60M6DPQ-E0
Preliminary
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ Diode reverse current
I_CES / I_R
—
Gate to emitter leak current
I_GES
—
Gate to emitter cutoff voltage
V_GE(off)
5
Collector to emitter saturation voltage V_CE(sat)
—
V_CE(sat)
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reverse transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Turn-on energy
E_on
—
Turn-off energy
E_off
—
Total switching energy
E_total
—
Short circuit withstand time
t_sc
6
FRD Forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test.
V_F
—
t_rr
—
Q_rr
—
I_rr
—
Typ Max
—
5
—
±1
—
7
1.8
2.3
2.2
—
2500
—
175
—
100
—
170
—
20
—
90
—
55
—
50
—
215
—
50
—
1.11
—
0.99
—
2.10
—
8
—
1.3
1.8
100
—
0.22
—
5.0
—
(Ta = 25°C)
Unit
Test Conditions
μA V_CE = 600 V, V_GE = 0
μA V_GE = ±30 V, V_CE = 0
V
V_CE = 10 V, I_C = 1 mA
V
I_C = 40 A, V_GE = 15 V ^Note3
V
I_C = 80 A, V_GE = 15 V ^Note3
pF V_CE = 25 V
pF
V_GE = 0
pF ^{f = 1 MHz}
nC V_GE = 15 V
nC ^VCE ^{= 300 V}
nC ^{IC = 40 A}
ns V_CC = 300 V
ns ^VGE ^{= 15 V}
ns ^{IC = 40 A}
ns ^{Rg = 5 Ω}
mJ ^{Inductive load}
mJ
mJ
μs Tc = 100 °C
V_CC ≤ 360 V, V_GE = 15 V
V
I_F = 40 A ^Note3
ns I_F = 40 A
μC ^diF^{/dt = 100 A/μs}
A
R07DS1088EJ0100 Rev.1.00
Jun 27, 2013
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