RJH60M0DPQ-E0 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – 600V - 22A - IGBT Application: Inverter

RJH60M0DPQ-E0
Typical Capacitance vs.
Collector to Emitter Voltage
10000
V_GE = 0 V
f = 1 MHz
Tc = 25°C
1000
Cies
100
Coes
Cres
10
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
200
V_CC = 300 V
I_F = 22 A
160
Tc = 150°C
120
80
25°C
40
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
16
V_CC = 300 V
I_F = 22 A
12
Tc = 150°C
8
4
25°C
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Dynamic Input Characteristics (Typical)
800
16
V_GE
600
12
400
8
200
0
0
V_CE
20
V_CC = 300 V ⁴
I_C = 22 A
Tc = 25°C
0
40
60
80
Gate Charge Qg (nC)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
1.0
V_CC = 300 V
I_F = 22 A
0.8
0.6
Tc = 150°C
0.4
0.2
25°C
0
0
40 80 120 160 200
Diode Current Slope di_F/dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
70
V_CE = 0 V
60 Pulse Test
50
40
30
20
Tc = 150°C
10
25°C
0
0
0.4 0.8 1.2 1.6 2.0
C-E Diode Forward Voltage V_CEF (V)
R07DS1085EJ0200 Rev.2.00
Jun 13, 2013
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