RJH60M0DPQ-E0 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – 600V - 22A - IGBT Application: Inverter

RJH60M0DPQ-E0
Switching Characteristics (Typical) (1)
1000
tf
100
td(off)
td(on)
10
tr
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Tc = 150°C
1
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
tf
100
td(off)
td(on)
tr
10
V_CC = 300 V, V_GE = 15 V
I_C = 22 A, Tc = 150°C
1
1
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
tf
100
td(on) ^td(off)
tr
10
V_CC = 300 V, V_GE = 15 V
1 ^{IC = 22 A, Rg = 5 Ω}
25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
Switching Characteristics (Typical) (2)
100
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Tc = 150°C
10
Eon
1
Eoff
0.1
0.01
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
1
Eoff
Eon
0.1
V_CC = 300 V, V_GE = 15 V
I_C = 22 A, Tc = 150°C
0.01
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10
1
Eoff
Eon
0.1
V_CC = 300 V, V_GE = 15 V
I_C = 22 A, Rg = 5 Ω
0.01
25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
R07DS1085EJ0200 Rev.2.00
Jun 13, 2013
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