RJH60A83RDPE_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – 600V - 10A - IGBT Application: Inverter

RJH60A83RDPE
Typical Capacitance vs.
Collector to Emitter Voltage
10000
1000
V_GE = 0 V
f = 1 MHz
Ta = 25°C
Cies
100
10
Coes
Cres
1
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
800
V_CC = 300 V
I_F = 10 A
600
400
200
Tc = 150°C
25°C
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
20
V_CC = 300 V
I_F = 10 A
16
Tc = 150°C
12
8
25°C
4
0
0
40 80 120 160 200
Diode Current Slope di_F/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
16
V_GE
600
12
400
8
200
0
0
V_CE
5
10
4
V_CC = 300 V
I_C = 10 A
Tc = 25°C
0
15 20 25
Gate Charge Qg (nC)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
1.0
V_CC = 300 V
I_F = 10 A
0.8
0.6
Tc = 150°C
0.4
25°C
0.2
0
0
40 80 120 160 200
Diode Current Slope diF /dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
40
V_GE = 0 V
Pulse Test
30
Tc = 25°C
20
150°C
10
0
0123456
C-E Diode Forward Voltage V_CEF (V)
R07DS0806EJ0200 Rev.2.00
Jul 12, 2012
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