RJH60A83RDPE_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – 600V - 10A - IGBT Application: Inverter

RJH60A83RDPE
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
6
5
4
3
I_C = 20 A
10 A
2
Tc = 25°C
Pulse Test
1
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Typical Transfer Characteristics
40
Tc = 150°C
30
25°C
20
10
V_CE = 10 V
Pulse Test
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
I_C = 10 mA
6
4
1 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
R07DS0806EJ0200 Rev.2.00
Jul 12, 2012
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
6
5
4
I_C = 20 A
3
10 A
2
Tc = 150°C
Pulse Test
1
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
5
V_GE = 15 V
Pulse Test
4
I_C = 20 A
3
10 A
2
5A
1
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
6
5
0
Collector current wave
4
(Square wave)
3
2
1 ^{Tj = 125°C, Tc = 90°C}
V_CE = 300 V, V_GE = 15 V
Rg = 5 Ω, duty = 50%
0
1
10
100
Frequency f (kHz)
1000
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