RJH60A81RDPD-A0 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – 600V - 5A - IGBT Application: Inverter

RJH60A81RDPD-A0
Typical Capacitance vs.
Collector to Emitter Voltage
10000
1000
V_GE = 0 V
f = 1 MHz
Ta = 25°C
Cies
100
10
Coes
Cres
1
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
800
V_CC = 300 V
I_F = 5 A
600
400
200
Tc = 150°C
25°C
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
20
V_CC = 300 V
I_F = 5 A
16
12
Tc = 150°C
8
25°C
4
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
16
V_GE
600
12
400
8
200
0
0
4
V_CC = 300 V
I_C = 5 A
V_CE
Tc = 25°C
0
4
8
12
16
Gate Charge Qg (nC)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
1.0
V_CC = 300 V
I_F = 5 A
0.8
0.6
0.4
Tc = 150°C
0.2
25°C
0
0
40 80 120 160 200
Diode Current Slope diF /dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
16
12
Tc = 25°C
8
150°C
4
V_GE = 0 V
Pulse Test
0
0123456
C-E Diode Forward Voltage V_CEF (V)
R07DS1092EJ0100 Rev.1.00
Jul 04, 2013
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