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| RJH60A81RDPD-A0 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – 600V - 5A - IGBT Application: Inverter | |||
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Preliminary Datasheet
RJH60A81RDPD-A0
600V - 5A - IGBT
Application: Inverter
R07DS1092EJ0100
Rev.1.00
Jul 04, 2013
Features
⢠Reverse conducting IGBT with monolithic diode
⢠Short circuit withstand time (5 μs typ.)
⢠Low collector to emitter saturation voltage
VCE(sat) = 2.0 V typ. (at IC = 5 A, VGE = 15 V, Ta = 25°C)
⢠Built-in fast recovery diode (trr = 100 ns typ.) in one package
⢠Trench gate and thin wafer technology
⢠High speed switching
tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 5 A, Rg = 5 Ω, Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZK-A
(Package name : TO-252A)
4
C
12 3
1. Gate
2. Collector
G
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction temperature
Storage temperature
Notes: 1. PW ⤠10 μs, duty cycle ⤠1%
2. Value at Tc = 25°C
Symbol
VCES / VR
VGES
IC
IC
Ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
θj-c Note2
Tj
Tstg
Ratings
600
±30
10
5
15
5
15
29.4
4.25
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C
°C
R07DS1092EJ0100 Rev.1.00
Jul 04, 2013
Page 1 of 8
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