RJF0611DPE Datasheet, PDF (6/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

RJF0611DPE
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
10 V
50 Ω
V_DD
= 30 V
Target Specifications
Waveform
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
Vin
10 V
Avalanche Test Circuit
V_DS
Monitor
Rg
L
I_AP
Monitor
D. U. T
V_DD
50 Ω
Avalanche Waveform
E_AR = ¹ L • I_AP2 •
2
V_(BR)DSS
V_{(BR)DSS –} V_DD
V_(BR)DSS
I_AP
I_D
V_DS
V_DD
0
R07DS0717EJ0100 Rev.1.00
Apr 17, 2012
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