RJF0611DPE Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

RJF0611DPE
Target Specifications
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Note; 4. Pulse test
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_IH(sd)1
I_IH(sd)2
Tsd
Vop
I_{D limt}
Min
3.5
—
—
—
—
—
—
—
3.5
30
Typ
—
—
—
—
—
0.8
0.35
175
—
—
Max
—
1.2
100
50
1
—
—
—
12
—
Unit
V
V
A
A
A
mA
mA
C
V
A
(Ta = 25°C)
Test Conditions
Vi = 8 V, V_DS = 0
Vi = 3.5 V, V_DS = 0
Vi = 1.2 V, V_DS = 0
Vi = 8 V, V_DS = 0
Vi = 3.5 V, V_DS = 0
Channel temperature
V_GS = 5 V, V_DS = 10 V ^{Note 4}
Electrical Characteristics
Item
Symbol Min
Typ
Max
Unit
Drain current
I_D1
—
—
45
A
I_D2
—
—
10
mA
I_D3
30
—
—
A
Drain to source breakdown
V_(BR)DSS
60
—
—
V
voltage
Gate to source breakdown
voltage
Gate to source leak current
V_(BR)GSS
16
—
—
V
V_(BR)GSS
–2.5
—
—
V
I_GSS1
—
—
100
A
I_GSS2
—
—
50
A
I_GSS3
—
—
1
A
I_GSS4
—
—
–100
A
Input current (shut down)
I_GS(OP)1
—
0.8
—
mA
I_GS(OP)2
—
0.35
—
mA
Zero gate voltage drain current
I_DSS
—
—
10
A
Gate to source cutoff voltage
V_GS(off)
1.1
—
2.1
V
Forward transfer admittance
|y_fs|
12
27
—
S
Static drain to source on state
R_DS(on)
—
30
40
m
resistance
R_DS(on)
—
21
30
m
Output capacitance
Coss
—
523
—
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
—
3.8
—
s
t_r
—
13.5
—
s
t_d(off)
—
4.1
—
s
t_f
—
7.3
—
s
Body-drain diode forward
voltage
V_DF
—
0.9
—
V
Body-drain diode reverse
recovery time
t_rr
—
110
—
ns
Over load shut down
operation time ^{Note 6}
t_os1
—
0.34
—
ms
t_os2
—
0.23
—
ms
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
V_GS = 3.5 V, V_DS = 10 V ^{Note 5}
V_GS = 1.2 V, V_DS = 10 V
V_GS = 5 V, V_DS = 10 V ^{Note 5}
I_D = 10 mA, V_GS = 0
I_G = 800 A, V_DS = 0
I_G = –100 A, V_DS = 0
V_GS = 8 V, V_DS = 0
V_GS = 3.5 V, V_DS = 0
V_GS = 1.2 V, V_DS = 0
V_GS = –2.4 V, V_DS = 0
V_GS = 8 V, V_DS = 0
V_GS = 3.5 V, V_DS = 0
V_DS = 32 V, V_GS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 15 A, V_DS = 10 V ^{Note 5}
I_D = 15 A, V_GS = 4 V ^{Note 5}
I_D = 15 A, V_GS = 10 V ^{Note 5}
V_DS = 10 V, V_GS = 0, f = 1MHz
V_GS = 10 V, I_D= 15 A, R_L = 2 
I_F = 30 A, V_GS = 0
I_F = 30 A, V_GS = 0
di_F/dt = 50 A/s
V_GS = 5 V, V_DD = 16 V
V_GS = 5 V, V_DD = 24 V
R07DS0717EJ0100 Rev.1.00
Apr 17, 2012
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