NP90N055VDG Datasheet, PDF (6/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP90N055VDG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
250
200
10 V
150
VGS = 4.5 V
100
50
0
0
Pulsed
0.5 1 1.5 2 2.5 3
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3
2
1
0
-75
VDS = VGS
ID = 250 μA
-25 25 75 125 175 225
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
12
10
8
VGS = 4.5 V
6
4
10 V
2
Pulsed
0
1
10
100
1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
Tch = −55°C
10
−25°C
25°C
1
75°C
125°C
0.1
150°C
175°C
0.01
0.001
0.0001
0
VDS = 10 V
Pulsed
1
2
3
4
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
−25°C
25°C
75°C
10
125°C
175°C
1
0.1
VDS = 5 V
Pulsed
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
12
ID = 45 A
10
Pulsed
8
6
4
2
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
4
Data Sheet D19792EJ1V0DS