NP90N055VDG Datasheet, PDF (5/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP90N055VDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
R(^D_V^S(oGnS)
Limit
= ^{1i 0}
ed
V)
ID(DC)
DC
ID(pulse)
PW
= _{1i 00 μs}
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
125
100
75
50
25
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
100
10
Rth(ch-C) = 1.43°C/W
1
0.1
0.01
100 μ
1m
10 m 100 m
1
10
PW - Pulse Width - s
Single Pulse
100
1000
Data Sheet D19792EJ1V0DS
3