NP82N10PUF Datasheet, PDF (6/9 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP82N10PUF
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
35
30
25
V_GS = 5.8 V
20
I_D = 18 A
15
V_GS = 10 V
10
I_D = 41 A
5
0
-100 -50 0
Pulsed
50 100 150 200
T_ch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
V_DD = 50 V
V_GS = 10 V
R_G = 0 Ω
t_d(off)
t_d(on)
10
t_r
t_f
1
0.1
1
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 10 V
10
0V
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1 1.2
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C_iss
1000
C_oss
100
10
V_GS = 0 V
f = 1 MHz
1
0.01
0.1
1
C_rss
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
120
12
VDD = 80 V
100
50 V
10
20 V
80
8
60
6
40
VGS
4
20
0
0
VDS
2
ID =82 A
0
10 20 30 40 50 60 70
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100A/µs
V_GS = 0 V
1
10
100
I_F - Drain Current - A
R07DS0444EJ0100 Rev.1.00
Aug 26, 2011
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