NP82N10PUF Datasheet, PDF (5/9 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP82N10PUF
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
180
160
V_GS = 10 V
140
120
5.8 V
100
80
60
40
20
Pulsed
0
012345678
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
4
V_DS = V_GS
I_D = 250 μA
3
2
1
0
-100 -50 0
50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
45
40
35
30
25
VGS = 10 V
20
5.8 V
15
10
5
Pulsed
0
0.1
1
10
100
1000
I_D - Drain Current - A
R07DS0444EJ0100 Rev.1.00
Aug 26, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
Tch = −55°C
−25°C
25°C
75°C
100°C
125°C
150°C
175°C
0.01
VDS = 10 V
Pulsed
0.001
0
1
2
3
4
5
6
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
75°C
25°C
10
−25°C
−55°C
Tｃｈ= 175°C
150°C
125°C
100°C
VDS = 5 V
Pulsed
1
0.1
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
35
30
25
20
15
10 _{ID = 18 A}
5
41 A
82 A
0
Pulsed
0
5
10
15
20
V_GS - Gate to Source Voltage - V
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