NP82N04MUG Datasheet, PDF (6/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP82N04MUG, NP82N04NUG
350
300
250
200
150
100
50
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulsed
0.5
1
1.5
2
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3.5
3
2.5
2
1.5
1
VDS = VGS
0.5
ID = 250 μA
0
-75 -25 25 75 125 175 225
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
8
6
4
2
0
0.1
VGS = 10 V
Pulsed
1
10
100
ID - Drain Current - A
1000
FORWARD TRANSFER CHARACTERISTICS
1000
100
VDS = 10 V
Pulse
10
TA = 175°C
150°C
1
125°C
85°C
0.1
−55°C
−25°C
25°C
0.01
0.001
01234567
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = −55°C
−25°C
25°C
10
75°C
125°C
150°C
175°C
1
0.1
0.1
VDS = 5 V
Pulsed
1
10
100
ID - Drain Current - A
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
ID = 82 A
20
41 A
16.4 A
10
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
4
Data Sheet D19803EJ1V0DS