NP60N04VLK Datasheet, PDF (6/8 Pages) Renesas Technology Corp – N-channel Power MOS FET

NP60N04VLK
Package Drawing (Unit: mm)
TO-252 (MP-3ZP) (Mass: 0.3g TYP.)
Renesas Code: PRSS0004ZP-A
6.5±0.2
5.1 TYP.
4.3 MIN.
4
2.3±0.1
0.5±0.1
No Plating
Preliminary
1.13
12
3
1.14 MAX.
2.3 2.3
No Plating
0.76±0.12
0 to 0.25
0.5±0.1
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Equivalent Circuit
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
R07DS1246EJ0100 Rev.1.00
Feb 12, 2015
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