NP60N04VLK Datasheet, PDF (3/8 Pages) Renesas Technology Corp – N-channel Power MOS FET

NP60N04VLK
Preliminary
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(ON) Limited
100 ^{(VGS=10 V)}
I_D(Pulse) = 240 A
I_D(DC) = 60 A
10
Power Dissipation Limited
PW _{= 100 μs}
1
Secondary Breakdown Limited
T_C = 25°C
Single Pulse
0.1
0.1
1
10
100
V_DS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R_th(ch-A) = 125°C/W
10
R_th(ch-C) = 1.43°C/W
1
0.1
Single Pulse
0.01
100 μ
1m
10 m 100 m
1
10
PW - Pulse Width - s
100
1000
R07DS1246EJ0100 Rev.1.00
Feb 12, 2015
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