NP55N055SUG_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
260
240 Pulsed
220
200
180
VGS = 10 V
160
140
120
100
80
60
40
20
0
0 2 4 6 8 10 12 14
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
VGS = VDS
ID = 250 µA
0.5
0
-100 -50 0
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
30
25
20
15
10
VGS = 10 V
5
Pulsed
0
1
10
100
1000
ID - Drain Current - A
NP55N055SUG
FORWARD TRANSFER CHARACTERISTICS
1000
100
VDS = 10 V
Pulsed
10 ^{TA = −55°C}
−25°C
1
25°C
75°C
125°C
0.1
150°C
175°C
0.01
0.001
0
2
4
6
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = −55°C
25°C
10
125°C
175°C
1
VDS = 10 V
Pulsed
0
0.1
1
10
100
ID - Drain Current - A
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
18
Pulsed
16
ID = 44 A
14
28 A
11 A
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate to Source Voltage - V
4
Data Sheet D16863EJ2V0DS