NP55N055SUG_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP55N055SUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
RDS(on) Limited
(at VGS = 10 V)
ID(pulse) = 220 A
PW = 100 µs
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
10
ID(DC) = 55 A
1 ms
DC
1
TC = 25°C
Single pulse
0.1
0.1
1
10 ms
10
100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10
Rth(ch-C) = 1.95°C/W
1
0.1
Single pulse
0.01
100 µ
1m
10 m 100 m
1
10
PW - Pulse Width - s
100
1000
Data Sheet D16863EJ2V0DS
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