NP33N06YDG Datasheet, PDF (6/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP33N06YDG
Package Drawings (Unit: mm)
8-pin HSON (Mass: 0.13 g TYP.)
1
8
2
7
3
6
4
5
6.0 ±0.2
5.4 ±0.2
0.10 S
Chapter Title
0.73
0.4
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
3.18 ±0.2
0.6 ±0.15
0.8 ±0.15
Equivalent Circuit
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0015EJ0100 Rev.1.00
Jul 01, 2010
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