NP33N06YDG Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP33N06YDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
ID = 16.5 A
35 _Pulsed
30
25
20
VGS = 5 V
15
10 V
10
5
0
-100
0
100
200
T_ch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 30 V
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
tr
tf
1
0.1
1
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 10 V
0V
10
1
Pulsed
0.1
0
0.5
1
1.5
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
100
VGS = 0 V
f = 1 MHz
10
0.1
1
Coss
Crss
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
12
50
VDD = 48 V
30 V
40
12 V
30
10
VGS
8
6
20
4
10
0
0
VDS
20
2
ID = 33 A
0
40
60
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1
10
100
I_F - Drain Current - A
R07DS0015EJ0100 Rev.1.00
Jul 01, 2010
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