NP110N04PUG_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP110N04PUG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
400
VGS = 10 V
300
200
100
0
0
Pulsed
0.2
0.4
0.6
0.8
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
VDS = VGS
ID = 250 µA
0
-100 -50 0
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
3
2
VGS = 10 V
1
Pulsed
0
1
10
100
1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
VDS = 10 V
Pulsed
TA = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
0.01
0.001
0
1
2
3
4
5
6
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
VDS = 10 V
Pulsed
TA = −55°C
100
25°C
85°C
125°C
175°C
10
1
1
10
100
1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
5
ID = 110 A
Pulsed
4
55 A
22 A
3
2
1
0
0
5
10
15
20
25
VGS - Gate to Source Voltage - V
4
Data Sheet D16852EJ1V0DS