NP110N04PUG_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP110N04PUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse) = 440 A
PW = 100 µs
100
ID(DC) = 110 A
RDS(on) Limited
(at VGS = 10 V)
1 ms
10 ms
10
DC
1
TC = 25°C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 0.52°C/W
0.1
0.01
0.001
100 µ
1m
10 m
100 m
1
10
PW - Pulse Width - s
Single pulse
100
1000
Data Sheet D16852EJ1V0DS
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