N0601N Datasheet, PDF (6/8 Pages) Renesas Technology Corp – N-CHANNEL MOSFET FOR SWITCHING

N0601N
Package Drawing (Unit: mm)
TO-263
10.0±0.3
7.8 MIN.
4
1.27±0.2
2.54
0.8±0.1
1
2
3
4.8 MAX.
1.3±0.2
0 to 0.25
2.4±0.2
0.5±0.2
0.254
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Chapter Title
Equivalent Circuit
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0557EJ0100 Rev.1.00
Nov 07, 2011
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