N0601N Datasheet, PDF (4/8 Pages) Renesas Technology Corp – N-CHANNEL MOSFET FOR SWITCHING

N0601N
400
300
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
200
100
Pulsed
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V_DS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
VDS = 10 V
ID = 1.0 mA
0
-50
0
50
100
150
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
VGS = 10 V
8
6
4
2
Pulsed
0
1
10
100
I_D - Drain Current - A
1000
R07DS0557EJ0100 Rev.1.00
Nov 07, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
100
TA = 125°C
10
75°C
25°C
−25°C
1
0.1
0.01
VDS = 10 V
Pulsed
0.001
0
1
2
3
4
5
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
TA = 125°C
75°C
10
25°C
−25°C
1
0.1
0.01
0.01
VDS = 10 V
Pulsed
0.1
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
25
ID = 50 A
Pulsed
20
15
10
5
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
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